VS-30TPS16PBF SCR DATASHEET
VS-30TPS16PBF ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 85 A
Maximum RMS on-state current (IT(RMS)): 135 A
Non repetitive surge peak on-state current (ITSM): 2450 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.2 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.15 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 0.6 mA
Package: TO‑209AC
VS-30TPS16PBF Datasheet
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Description
VS-30TPS16PbF, VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 (A) • High voltage (up to 1600 V) • Designed and qualified according to JEDEC®-JESD47 • 125 °C max. operating junction temperature 3 2 • Material categorization: 1 1 (K) (G) 3 For definitions of compliance please see Available TO-247AC www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY • Typical usage is in input rectification
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |