VS-50RIA SCR DATASHEET

VS-50RIA ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 105 A
   Maximum RMS on-state current (I_T(RMS)): 165 A
   Non repetitive surge peak on-state current (I_TSM): 3000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.2 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 1.73 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 0.6 mA

Package: TO‑209AC

 

VS-50RIA Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

VS-50RIA Datasheet

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Description

VS-50RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 50 A FEATURES • High current rating • Excellent dynamic characteristics • dV/dt = 1000 V/µs option • Superior surge capabilities • Standard package • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AC (TO-65) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLI