All Transistors. SCR. VS-ST083S12P Datasheet

 

VS-ST083S12P SCR DATASHEET

VS-ST083S12P ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 200 A
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 0.15 mA

Package: TO‑209AB

 

VS-ST083S12P Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

VS-ST083S12P Datasheet

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VS-ST083S12P
 datasheet

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VS-ST083S12P
 datasheet #2

Description

VS-ST083SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 85 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance • Compression bonding TO-209AC (TO-94) • Designed and qualified for industrial level • Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc?99912 Package TO-209AC (TO-94) TYPICAL APPLICATIONS Diode v

 
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