VS-ST110SPBF SCR DATASHEET

VS-ST110SPBF ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 410 A
   Peak on-state voltage drop (V_TM): 1.69 V
   Triggering gate current (I_GT): 0.09 mA

Package: TO‑200AB

VS-ST110SPBF Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

VS-ST110SPBF Datasheet

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Description

VS-ST110SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES • Center gate • International standard case TO-209AC (TO-94) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Hermetic glass-metal case with ceramic insulator (Glass-metal seal over 1200 V) TO-209AC (TO-94) • Designed and qualified for industrial level • Material categorization: For definitions of compliance

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