VS-ST180SPBF SCR Spec

VS-ST180SPBF ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 300 A
   Peak on-state voltage drop (V_TM): 1.28 V
   Triggering gate current (I_GT): 0.2 mA

Package: TO‑209AE

 

VS-ST180SPBF Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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VS-ST180SPBF Spec

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Description

VS-ST180SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 200 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) • Hermetic metal case with ceramic insulator  (Also available with glass-metal seal up to 1200 V) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) • Designed and qualified for industrial level • Material categorization: