VS-ST330SPBF DATASHEET

VS-ST330SPBF ELECTRICAL SPECIFICATIONS

   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum RMS on-state current (I_T(RMS)): 60 A
   Non repetitive surge peak on-state current (I_TSM): 520 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.92 K/W

Package: V1‑A‑PACK

VS-ST330SPBF Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

VS-ST330SPBF Datasheet

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Description

VS-ST330SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 330 A FEATURES • Center amplifying gate • International standard case TO-209AE (TO-118) • Hermetic metal case with ceramic insulator TO- 209AE (TO-118) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Designed and qualified for industrial level PRODUCT SUMMARY • Material categorization: for definitions of compliance IT(AV)

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. VS-ST330SPBF Datasheet