All Transistors. SCR. WCD10C60 Datasheet

 

WCD10C60 SCR DATASHEET

WCD10C60 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Triggering gate voltage (VGT): 1.5 V
   Triggering gate current (IGT): 15 mA
   Holding current (IH): 20 mA

Package: TO‑220AB

 

WCD10C60 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

WCD10C60 Datasheet

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WCD10C60
 datasheet

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WCD10C60
 datasheet #2

Description

WCD10C60 WCD10C60 WCD10C60 WCD10C60 Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT =10A) (RMS) � Low On-State Voltage(1.4V(Typ.)@I ) TM � Non-isolation Type General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capabi

 
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