WCD4C60S SCR Spec

WCD4C60S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Triggering gate voltage (V_GT): 1.3 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 50 mA

Package: TO‑220AB

 

WCD4C60S Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

WCD4C60S Spec

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Description

WCD4C60S WCD4C60S WCD4C60S WCD4C60S Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ I ) TM General Description Sensitive gate triggering SCR is suitable for the appli cation where requiring high bidirectional blocking voltage capabili ty and also suitable for over voltage