WCD8C60 SCR Spec

WCD8C60 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Triggering gate voltage (V_GT): 1.3 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 50 mA

Package: TO‑220AB

 

WCD8C60 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

WCD8C60 Spec

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Description

WCD8C60 WCD8C60 WCD8C60 WCD8C60 Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT =8A) (RMS) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(V =1500V AC) ISO General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage