WCD8C60S SCR DATASHEET

WCD8C60S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Triggering gate voltage (V_GT): 0.8 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: TO‑251

 

WCD8C60S Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

WCD8C60S Datasheet

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Description

WCD8C60S WCD8C60S WCD8C60S WCD8C60S Sensitive Gate Sensitive Gate Sensitive Gate Sensitive Gate Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Sensitive gate trigger current:I =200µA maximum GT � Low On-State Voltage :V =1.2(typ.) @ I ) TM TM � Low reverse and forward blocking current: I /I =1mA@TC=125℃ DRM RRM � Low holding current :I =5mA maximum H General Description Sensit