All Transistors. SCR. WCD8C60S Datasheet

 

WCD8C60S SCR DATASHEET

WCD8C60S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Triggering gate voltage (VGT): 0.8 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: TO‑251

 

WCD8C60S Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

WCD8C60S Datasheet

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WCD8C60S
 datasheet

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WCD8C60S
 datasheet #2

Description

WCD8C60S WCD8C60S WCD8C60S WCD8C60S Sensitive Gate Sensitive Gate Sensitive Gate Sensitive Gate Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Sensitive gate trigger current:I =200µA maximum GT � Low On-State Voltage :V =1.2(typ.) @ I ) TM TM � Low reverse and forward blocking current: I /I =1mA@TC=125℃ DRM RRM � Low holding current :I =5mA maximum H General Description Sensit

 
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