All Transistors. SCR. WTN1A80 Datasheet

 

WTN1A80 Triac DATASHEET

WTN1A80 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Triggering gate voltage (VGT): 1.2 V
   Peak on-state voltage drop (VTM): 1.55 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 10 mA

Package: TO‑220AB

 

WTN1A80 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

WTN1A80 Datasheet

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WTN1A80
 datasheet

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WTN1A80
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Description

WTN1A80 WTN1A80 WTN1A80 WTN1A80 Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage:800V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. General Description General purpose switching and p

 
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