WTPB4A60SW SCR DATASHEET

WTPB4A60SW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 1.25 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 150 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.45 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

WTPB4A60SW Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

WTPB4A60SW Datasheet

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Description

WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM) ◆ High Commutation dv/dt General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic f