All Transistors. SCR. WTPB8A60CW Datasheet

 

WTPB8A60CW SCR DATASHEET

WTPB8A60CW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 1.25 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.45 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: SOT‑223

 

WTPB8A60CW Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

WTPB8A60CW Datasheet

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WTPB8A60CW
 datasheet

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WTPB8A60CW
 datasheet #2

Description

WTPB8A60CW Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Bi-Directional Triode Thyristor Features Features Features Features ■ Repetitive Peak off-State Voltage:600V ■R.M.S On-State Current(IT(RMS)=8A ■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A ■ High Commutation dV/dt. General Description General Description General Description General Description General purpose switching and phase control applications. These de

 
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