All Transistors. SCR. X00602N Datasheet

 

X00602N SCR DATASHEET

X00602N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 1.25 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.45 V
   Triggering gate current (IGT): 0.05 mA
   Holding current (IH): 5 mA

Package: SOT‑223

 

X00602N Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

X00602N Datasheet

Page #1

X00602N
 datasheet

Page #2

X00602N
 datasheet #2

Description

X006 0.8 A sensitive gate SCRs Features A ■ IT(RMS) = 0.8 A ■ VDRM/VRRM = 600 V G ■ IGT = 200 µA K Description Thanks to highly sensitive triggering levels, the A X006 SCR series is suitable for all applications where the available gate current is limited, such G A K as ground fault circuit interrupters, overvoltage K G A crowbar protection in low power supplies, capacitive ignition circuits, etc. TO-92 SOT-223 Available in though-hole or surface-mount (

 
Back to Top