X00605MAG SCR DATASHEET
X00605MAG ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 1.25 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.45 V
Triggering gate current (IGT): 0.05 mA
Holding current (IH): 5 mA
Package: TO‑92
X00605MAG Datasheet
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Description
X00605MAG SCRs Description Simplified outline Glass passivated, sensitive gate thyristors in a plastic envelope, TO-92 intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 123 Symbol Features • Blocking voltage to 600 V a • k On-state RMS current to 0.8 A • Ultra low gate trigger current g Description
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |