All Transistors. SCR. X00605MAG Datasheet

 

X00605MAG SCR DATASHEET

X00605MAG ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 1.25 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.45 V
   Triggering gate current (IGT): 0.05 mA
   Holding current (IH): 5 mA

Package: TO‑92

 

X00605MAG Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

X00605MAG Datasheet

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X00605MAG
 datasheet

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X00605MAG
 datasheet #2

Description

X00605MAG SCRs Description Simplified outline Glass passivated, sensitive gate thyristors in a plastic envelope, TO-92 intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 123 Symbol Features • Blocking voltage to 600 V a • k On-state RMS current to 0.8 A • Ultra low gate trigger current g Description

 
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