All Transistors. SCR. Y30KSE Datasheet

 

Y30KSE SCR DATASHEET

Y30KSE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 1040 A
   Non repetitive surge peak on-state current (ITSM): 11000 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
   Peak on-state voltage drop (VTM): 1.43 V

 

Y30KSE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y30KSE Datasheet

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Y30KSE
 datasheet

Page #2

Y30KSE
 datasheet #2

Description

Y30KSE BI-DIRECTIONAL THYRISTOR Features:  Two anti-paralled thyristors on one Si-wafer  Hermetic metal cases with ceramic insulators  Capsule packages for doubble sided cooling IT(RMS) 520A Typical Applications VDRM/VRRM 500~1800V  High power industrical and power transmissior ITSM 5.0kA  DC and AC motor control I2t 125 A2s*103  AC controllers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 50Hz sine wave TC=55°C 730 I

 
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