All Transistors. SCR. Y35KSE Datasheet

 

Y35KSE Triac DATASHEET

Y35KSE ELECTRICAL SPECIFICATIONS

 

Type: Triac

Maximum average on-state current (IT(AVR)): 1080 A

Non repetitive surge peak on-state current (ITSM): 7600 A

Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs

Critical rate of rise of off-state voltage (dV/dt): 50 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C

Junction to case thermal resistance (RTH(j-c)): 0.04 K/W

Peak on-state voltage drop (VTM): 1.75 V

 

Y35KSE Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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Y35KSE Datasheet

Page #2

Y35KSE
 datasheet

Page #2

Y35KSE
 datasheet #2

Description

Y35KSE BI-DIRECTIONAL THYRISTOR Features:  Two anti-paralled thyristors on one Si-wafer  Hermetic metal cases with ceramic insulators IT(RMS) 750A  Capsule packages for doubble sided cooling Typical Applications VDRM/VRRM 500~1800V  High power industrical and power transmissior ITSM 7.6 kA  DC and AC motor control I2t 288 A2s*103  AC controllers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 50Hz sine wave TC=55

 
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