All Transistors. SCR. Y35KSE Datasheet

 

Y35KSE SCR DATASHEET

Y35KSE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 620 A
   Non repetitive surge peak on-state current (ITSM): 4500 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
   Peak on-state voltage drop (VTM): 2.83 V

 

Y35KSE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y35KSE Datasheet

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Y35KSE
 datasheet

Page #2

Y35KSE
 datasheet #2

Description

Y35KSE BI-DIRECTIONAL THYRISTOR Features:  Two anti-paralled thyristors on one Si-wafer  Hermetic metal cases with ceramic insulators IT(RMS) 750A  Capsule packages for doubble sided cooling Typical Applications VDRM/VRRM 500~1800V  High power industrical and power transmissior ITSM 7.6 kA  DC and AC motor control I2t 288 A2s*103  AC controllers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 50Hz sine wave TC=55

 
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