All Transistors. SCR. Y40KSE Datasheet

 

Y40KSE SCR DATASHEET

Y40KSE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 1430 A
   Non repetitive surge peak on-state current (ITSM): 15000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
   Peak on-state voltage drop (VTM): 2 V

 

Y40KSE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y40KSE Datasheet

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Y40KSE
 datasheet

Page #2

Y40KSE
 datasheet #2

Description

Y40KSE BI-DIRECTIONAL THYRISTOR Features:  Two anti-paralled thyristors on one Si-wafer  Hermetic metal cases with ceramic insulators IT(RMS) 930A  Capsule packages for doubble sided cooling Typical Applications VDRM/VRRM 500~1800V  High power industrical and power transmissior ITSM 8.8 KA  DC and AC motor control I2t 387 A2s*103  AC controllers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 50Hz sine wave TC=55°C 125

 
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