All Transistors. SCR. Y50DSE Datasheet

 

Y50DSE SCR DATASHEET

Y50DSE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 1730 A
   Non repetitive surge peak on-state current (ITSM): 17000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
   Peak on-state voltage drop (VTM): 2.8 V

 

Y50DSE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y50DSE Datasheet

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Y50DSE
 datasheet

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Y50DSE
 datasheet #2

Description

Y50DSE Reversely Switching Dynistors Features: High power High reliability IP 100 KA Low price、Long life VDRM 1800-2000V Typical Applications: Generator for power exciter ITSM 10 KA laser pumping Pulse energization of electrostatic precipitator Power magnetron modulation VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS UNIT Min Type Max I Repetitive peak current T =25℃ I =500A t =50μs 100 KA P j RT p V Repetitive peak off-state voltage T =25℃ 1

 
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