All Transistors. SCR. Y50KPJ Datasheet

 

Y50KPJ Reverse-dinistor DATASHEET

Y50KPJ ELECTRICAL SPECIFICATIONS

 

   Type: Reverse-dinistor
   Maximum repetitive peak and off-state voltage (VDRM): 3000 V
   Maximum average on-state current (IT(AVR)): 18 A
   Maximum RMS on-state current (IT(RMS)): 180000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 40000 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Peak on-state voltage drop (VTM): 20 V

 

Y50KPJ Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y50KPJ Datasheet

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Y50KPJ
 datasheet

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Y50KPJ
 datasheet #2

Description

Y50KPJ PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator IT(AV) 1050A  Low on-state and switching losses VDRM/VRRM 3100~4200V Typical Applications ITSM 13 kA  AC controllers  DC and AC motor control I2t 845 103A2S  Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 1220 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side cool

 
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