All Transistors. SCR. Y60KPE Datasheet

 

Y60KPE SCR DATASHEET

Y60KPE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 2240 A
   Non repetitive surge peak on-state current (ITSM): 23000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Peak on-state voltage drop (VTM): 2.29 V

 

Y60KPE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y60KPE Datasheet

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Y60KPE
 datasheet

Page #2

Y60KPE
 datasheet #2

Description

Y60KPE PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator IT(AV) 2000A  Low on-state and switching losses Typical Applications VDRM/VRRM 1100~1800V  AC controllers ITSM 30 kA  DC and AC motor control I2t 4500 103A2S  Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 2360 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side coo

 
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