All Transistors. SCR. Y65DSE Datasheet

 

Y65DSE SCR DATASHEET

Y65DSE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (IT(AVR)): 2160 A
   Non repetitive surge peak on-state current (ITSM): 22700 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Peak on-state voltage drop (VTM): 2.4 V

 

Y65DSE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Y65DSE Datasheet

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Y65DSE
 datasheet

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Y65DSE
 datasheet #2

Description

Y65DSE Reversely Switching Dynistors Features: High power High reliability IP 180 KA Low price、Long life VDRM 1800-2000 V Typical Applications: Generator for power exciter laser ITSM 18 KA pumping Pulse energization of electrostatic precipitator Power magnetron modulation VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS UNIT Min Type Max IP Repetitive peak current Tj=25℃ IRT=1100A tp=50μs 180 KA V Repetitive peak off-state voltage T =25℃ 1800

 
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