Y89KPJ Triac DATASHEET
Y89KPJ ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 1 A
Non repetitive surge peak on-state current (ITSM): 8 A
Critical repetitive rate of rise of on-state current (dI/dt): 20 A/µs
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 25 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 3 mA
Holding current (IH): 7 mA
Package: SOT‑223
Y89KPJ Datasheet
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Description
Y89KPJ PHASE CONTROL THYRISTOR Features Center amplifying gate Metal case with ceramic insulator IT(AV) 3230 A Low on-state and switching losses VDRM/VRRM 3100-4200V Typical Applications AC controllers ITSM 40 kA DC and AC motor control I2t 8000 103A2S Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 3750 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side co
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |