Z0103NN Triac DATASHEET
Z0103NN ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 700 V
Maximum RMS on-state current (IT(RMS)): 1 A
Non repetitive surge peak on-state current (ITSM): 8 A
Critical repetitive rate of rise of on-state current (dI/dt): 20 A/µs
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
Junction to case thermal resistance (RTH(j-c)): 60 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 10 mA
Package: TO‑92
Z0103NN Datasheet
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Description
Z0103NN 4Q Triac 26 August 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface- mountable plastic package intended for applications requiring direct interfacing to logic level ICs and low power gate drivers. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Planar passivated for voltage rug
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