All Transistors. SCR. Z0103NN Datasheet

 

Z0103NN Triac DATASHEET

Z0103NN ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 700 V
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 8 A
   Critical repetitive rate of rise of on-state current (dI/dt): 20 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
   Junction to case thermal resistance (RTH(j-c)): 60 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 10 mA

Package: TO‑92

 

Z0103NN Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

Z0103NN Datasheet

Page #1

Z0103NN
 datasheet

Page #2

Z0103NN
 datasheet #2

Description

Z0103NN 4Q Triac 26 August 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface- mountable plastic package intended for applications requiring direct interfacing to logic level ICs and low power gate drivers. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Planar passivated for voltage rug

 
Back to Top