Z0109NN0 Triac DATASHEET

Z0109NN0 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical repetitive rate of rise of on-state current (dI/dt): 20 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 20 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 100 K/W
   Junction to case thermal resistance (R_TH(j-c)): 15 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 5 mA

Package: TO202

 

Z0109NN0 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

Z0109NN0 Datasheet

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Description

Z0109NN0 4Q Triac 26 August 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT223 (SC-73) surface- mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers. 2. Features and benefits • Direct interfacing to logic level ICs • Enhanced current surge capability • Enhanced noise immunity • High blocking voltage capability