BT169EW Spec
BT169EW Spec
BT169EW.pdf
isc Thyristors BT169EW DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak
Keywords - ALL TRANSISTORS
BT169EW Design, MOSFET, Power
BT169EW RoHS Compliant, Service, Triacs, Semiconductor
BT169EW Database, Innovation, IC, Electricity
