CPQ150 DATASHEET
CPQ150 DATASHEET
CPQ150.pdf
TM CPQ150 Central Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 MILS x 150 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 68.9 MILS x 118 MILS Gate Bonding Pad Area 39.4 MILS x 39.4 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH W
Keywords - ALL TRANSISTORS DATASHEET
CPQ150 Design, MOSFET, Power
CPQ150 RoHS Compliant, Service, Triacs, Semiconductor
CPQ150 Database, Innovation, IC, Electricity
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |