CPQ150 Spec
CPQ150 Spec
CPQ150.pdf
TM CPQ150 Central Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 MILS x 150 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 68.9 MILS x 118 MILS Gate Bonding Pad Area 39.4 MILS x 39.4 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH W
Keywords - ALL TRANSISTORS
CPQ150 Design, MOSFET, Power
CPQ150 RoHS Compliant, Service, Triacs, Semiconductor
CPQ150 Database, Innovation, IC, Electricity
