HSB100-8 DATASHEET
HSB100-8 DATASHEET
HSB100-8.pdf
VDRM = 600 V HSB100-8 IT(RMS) = 0.8A Silicon Controlled Rectifier 3.Anode Symbol FEATURES 2.Gate Repetitive Peak Off-State Voltage: 600V 1.Cathode R.M.S On-state Current (IT(RMS)=0.8A) Average On-state Current (IT(AV)=0.5A) Low On-State Voltage (1.2VTyp@ITM) 1. K 2. G 3. A 3 2 General Description 1 HSB100-8 PNPN Devices designed for high
Keywords - ALL TRANSISTORS DATASHEET
HSB100-8 Design, MOSFET, Power
HSB100-8 RoHS Compliant, Service, Triacs, Semiconductor
HSB100-8 Database, Innovation, IC, Electricity
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |