HTB1A80 DATASHEET
HTB1A80 DATASHEET
HTB1A80.pdf
HTB1-800 VDRM = 800 V BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) IT(RMS) = 1.0A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 800V R.M.S On-state Current (IT(RMS)=1A) 2.Gate High Commutation dv/dt 1.T1 TO-92 1. T1 General Description 2. Gate 3. T2 3 The TRIAC HTB1-800 is suitable for AC switching application, phase 2 control application such as heater control, mo
Keywords - ALL TRANSISTORS DATASHEET
HTB1A80 Design, MOSFET, Power
HTB1A80 RoHS Compliant, Service, Triacs, Semiconductor
HTB1A80 Database, Innovation, IC, Electricity
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |