HTP4A60S DATASHEET
HTP4A60S DATASHEET
HTP4A60S.pdf
2.T2 Symbol VDRM = 600 V IT(RMS) = 4.0A 3.Gate HTx4-600S 1.T1 NON INSULATED TYPE IGT(MAX) = 10mA SENSITIVE GATE TRIAC 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=4A) High Commutation dv/dt Sensitive Gate Triggering 4 Mode HTP4-600S HTC4-600S HTM4-600S General Description The devices is sensitive gate TRIAC suitable for
Keywords - ALL TRANSISTORS DATASHEET
HTP4A60S Design, MOSFET, Power
HTP4A60S RoHS Compliant, Service, Triacs, Semiconductor
HTP4A60S Database, Innovation, IC, Electricity
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |