IXHH40N150HV DATASHEET

IXHH40N150HV DATASHEET

IXHH40N150HV.pdf

  Preliminary Technical Information VDM = 1500V 1500V MOS Gated IXHH40N150HV Thyristor A G K TO-247HV Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V G VGK Continuous ±30 V K VGK Transient ±40 V Tab A ITSM TC = 25°C, 1μs 7.6 kA TC = 25°C, 10μs 3.5 kA PD TC = 25°C 695 W TJ -55 ... +150 °C G = Gate K = Cathode TJM 150 °C A = Anode Tab = Anode T

Keywords - ALL TRANSISTORS DATASHEET

 IXHH40N150HV Design, MOSFET, Power

 IXHH40N150HV RoHS Compliant, Service, Triacs, Semiconductor

 IXHH40N150HV Database, Innovation, IC, Electricity