IXHX40N150V1HV DATASHEET

IXHX40N150V1HV DATASHEET

IXHX40N150V1HV.pdf

  Preliminary Technical Information VDM = 1500V 1500V MOS Gated IXHX40N150V1HV Thyristor A w/ Anti-Parallel Diode G K TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V G VGK Transient ±40 V K Tab A ITSM TC = 25°C, 1μs 7.6 kA TC = 25°C, 10μs 3.5 kA PD TC = 25°C 695 W G = Gate K = Cathode A = Anode Tab = Anode TJ -5

Keywords - ALL TRANSISTORS DATASHEET

 IXHX40N150V1HV Design, MOSFET, Power

 IXHX40N150V1HV RoHS Compliant, Service, Triacs, Semiconductor

 IXHX40N150V1HV Database, Innovation, IC, Electricity