MMIX1H60N150V1 DATASHEET

MMIX1H60N150V1 DATASHEET

MMIX1H60N150V1.pdf

  Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMIX1H60N150V1 Thyristor A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V A VGK Continuous ±30 V VGK Transient ±40 V ITSM TC = 25°C, 1μs 32.0 kA K TC = 25°C, 10μs 11.8 kA PD TC = 25°C 446 W G TJ -55 ... +150

Keywords - ALL TRANSISTORS DATASHEET

 MMIX1H60N150V1 Design, MOSFET, Power

 MMIX1H60N150V1 RoHS Compliant, Service, Triacs, Semiconductor

 MMIX1H60N150V1 Database, Innovation, IC, Electricity