MMJX1H40N150 DATASHEET

MMJX1H40N150 DATASHEET

MMJX1H40N150.pdf

  Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMJX1H40N150 Thyristor A A G (Electrically Isolated Tab) K G K Isolated Tab Symbol Test Conditions Maximum Ratings A VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V VGK Transient ±40 V K ITSM TC = 25°C, 1μs 15.5 kA TC = 25°C, 10μs 6.4 kA G PD TC = 25°C 320 W TJ -55 ... +150 °C TJM 150 °C G = Gate

Keywords - ALL TRANSISTORS DATASHEET

 MMJX1H40N150 Design, MOSFET, Power

 MMJX1H40N150 RoHS Compliant, Service, Triacs, Semiconductor

 MMJX1H40N150 Database, Innovation, IC, Electricity