SKT1200-18E DATASHEET
SKT1200-18E DATASHEET
SKT1200-18E.pdf
SKT 1200/18 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) Tc =85°C 1200 A sinus 180° Tc =100°C 840 A ITSM Tj =25°C 30000 A 10 ms Tj =125°C 25500 A i2t Tj =25°C 4500000 A²s 10 ms Tj =125°C 3251250 A²s VRSM 1800 V Capsule Thyristor VRRM 1800 V VDRM 1800 V (di/dt)cr Tj = 125 °C 125 A/µs (dv/dt)cr Tj = 125 °C 1000 V/µs Line Thyristor Tj -40 .
Keywords - ALL TRANSISTORS DATASHEET
SKT1200-18E Design, MOSFET, Power
SKT1200-18E RoHS Compliant, Service, Triacs, Semiconductor
SKT1200-18E Database, Innovation, IC, Electricity
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Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |