TFD312SJ DATASHEET
TFD312SJ DATASHEET
TFD312SJ.pdf
TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series Features External Dimensions 4.2± 0.2 (Unit: mm) 10.0± 0.2 φ 3.3± 0.2 2.8 C 0.5 With built-in Avalanche diode Average on-state current: I =3A T(AV) A Gate trigger current: I =10mA max GT a b Isolation voltage: V =1500V(50Hz AC, RMS, 1min.) ISO 1.35± 0.15 G 1.35± 0.15 +0.2 K 0.85–0.1 +0.2 2.4
Keywords - ALL TRANSISTORS DATASHEET
TFD312SJ Design, MOSFET, Power
TFD312SJ RoHS Compliant, Service, Triacs, Semiconductor
TFD312SJ Database, Innovation, IC, Electricity
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |