2SB510-5 PDF and Equivalents Search

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JMnic Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abso... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SB512 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PA... See More ⇒

JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB518 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching an... See More ⇒

isc Silicon PNP Power Transistor 2SB513 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage Complement to Type 2SD366 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB515 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -2A CE(sat) C Complement to Type 2SD331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ... See More ⇒

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym... See More ⇒

isc Silicon PNP Power Transistor 2SB512 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD365 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M... See More ⇒

isc Silicon PNP Power Transistor 2SB511 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -1.5A CE(sat) C Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power amplifier output applications. ABSOLUTE MA... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB519 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒