2SB511E PDF and Equivalents Search

 

2SB511E PDF Specs and Replacement


   Type Designator: 2SB511E
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220
 

 2SB511E Substitution

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2SB511E PDF detailed specifications

 8.1. Size:48K  no
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2SB511E

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 8.2. Size:155K  jmnic
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2SB511E

JMnic Product Specification Silicon PNP Power Transistors 2SB511 DESCRIPTION With TO-220C package Complement to type 2SD325 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base... See More ⇒

 8.3. Size:218K  inchange semiconductor
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2SB511E

isc Silicon PNP Power Transistor 2SB511 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max) @I = -1.5A CE(sat) C Complement to Type 2SD325 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 5W AF power amplifier output applications. ABSOLUTE MA... See More ⇒

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Detailed specifications: 2SB508F , 2SB509 , 2SB51 , 2SB510 , 2SB510-5 , 2SB511 , 2SB511C , 2SB511D , BD335 , 2SB511F , 2SB512 , 2SB512A , 2SB513 , 2SB513A , 2SB514 , 2SB514C , 2SB514D .

History: 2SB507 | 2SB462 | 2SB502 | 2SD313F

Keywords - 2SB511E pdf specs

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