All Transistors. 2SB66 Datasheet

 

2SB66 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB66

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 75 °C

Transition Frequency (ft): 0.6 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

2SB66 Transistor Equivalent Substitute - Cross-Reference Search

 

2SB66 Datasheet (PDF)

1.1. 2sb668.pdf Size:148K _jmnic

2SB66
2SB66

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

1.2. 2sb668.pdf Size:80K _inchange_semiconductor

2SB66
2SB66

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALU

Datasheet: 2SB653 , 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , 2SB656A , BC548 , 2SB668 , 2SB668A , 2SB669 , 2SB669A , 2SB66H , 2SB67 , 2SB670 , 2SB670A .

 


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