All Transistors. 2SB927S Datasheet

 

2SB927S Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SB927S

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 32 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT33

2SB927S Transistor Equivalent Substitute - Cross-Reference Search

 

2SB927S Datasheet (PDF)

5.1. 2sb922.pdf Size:26K _sanyo

2SB927S
2SB927S

Ordering number : ENN1429A 2SB922 / 2SD1238 PNP / NPN Epitaxial Planar Silicon Transistors 2SB922 / 2SD1238 Large Current Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit : mm inverters, converters. 2022A [2SB922 / 2SD1238] Features 15.6 3.2 4.8 14.0 2.0 Low collector-to-emitter saturation voltage : VCE(sat)=--0

5.2. 2sb928.pdf Size:49K _panasonic

2SB927S
2SB927S

Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 1.5max. 1.1max. Features High collector to emitter VCEO 0.8 0.1 0.5max. High collector power dissipation PC 2.54 0.3 N type package enabling direct soldering of the radiating

5.3. 2sb929.pdf Size:50K _panasonic

2SB927S
2SB927S

Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 For power amplification Complementary to 2SD1252 and 2SD1252A Features 1.5max. 1.1max. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 0.8 0.1 0.5max. N type package enabling direct soldering of t

5.4. 2sb921.pdf Size:277K _inchange_semiconductor

2SB927S
2SB927S

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB921 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·Complement to Type 2SD1237 APPLICATIONS ·Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

5.5. 2sb922.pdf Size:271K _inchange_semiconductor

2SB927S
2SB927S

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB922 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Complement to Type 2SD1238 APPLICATIONS ·Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

5.6. 2sb925.pdf Size:275K _inchange_semiconductor

2SB927S
2SB927S

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB925 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

5.7. 2sb929a.pdf Size:1144K _kexin

2SB927S
2SB927S

SMD Type Transistors PNP Transistors 2SB929A TO-252 Unit: mm ■ Features +0.15 ● High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Complementary to 2SD1252A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2

5.8. 2sb928.pdf Size:1112K _kexin

2SB927S
2SB927S

SMD Type Transistors PNP Transistors 2SB928 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High collector-emitter voltage (Base open) VCEO ● High collector power dissipation PC ● Complementary to 2SD1250 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum R

5.9. 2sb928a.pdf Size:1109K _kexin

2SB927S
2SB927S

SMD Type Transistors PNP Transistors 2SB928A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High collector-emitter voltage (Base open) VCEO ● High collector power dissipation PC ● Complementary to 2SD1250A 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum

5.10. 2sb929.pdf Size:1145K _kexin

2SB927S
2SB927S

SMD Type Transistors PNP Transistors 2SB929 TO-252 Unit: mm ■ Features +0.15 ● High forward current transfer ratio hFE 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Complementary to 2SD1252 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 C

Datasheet: 2SB925A , 2SB926 , 2SB926R , 2SB926S , 2SB926T , 2SB926U , 2SB927 , 2SB927R , 2SC1740 , 2SB927T , 2SB927U , 2SB928 , 2SB928A , 2SB929 , 2SB929A , 2SB93 , 2SB930 .

 


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