All Transistors. 2SC1030C Datasheet

 

2SC1030C Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1030C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 12 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

2SC1030C Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1030C Datasheet (PDF)

3.1. 2sc1030.pdf Size:44K _jmnic

2SC1030C

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC=25

4.1. 2sc1034.pdf Size:453K _sony

2SC1030C

5.1. 2sc1008-g-o-y-r.pdf Size:430K _update

2SC1030C
2SC1030C

2SC1008-R MCC 2SC1008-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1008-Y CA 91311 Phone: (818) 701-4933 2SC1008-G Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistor

5.2. 2sc108a 2sc109a.pdf Size:42K _toshiba

2SC1030C

5.3. 2sc1046.pdf Size:39K _sanyo

2SC1030C

5.4. 2sc1070b.pdf Size:24K _nec

2SC1030C

5.5. 2sc1009a.pdf Size:325K _nec

2SC1030C
2SC1030C

5.6. 2sc1070.pdf Size:24K _nec

2SC1030C

5.7. 2sc1047.pdf Size:56K _panasonic

2SC1030C
2SC1030C

Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter

5.8. 2sc1047 e.pdf Size:60K _panasonic

2SC1030C
2SC1030C

Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter

5.9. 2sc1061.pdf Size:110K _mospec

2SC1030C
2SC1030C

A A A

5.10. 2sc1098.pdf Size:52K _no

2SC1030C

5.11. 2sc1060.pdf Size:46K _no

2SC1030C

5.12. 2sc1008.pdf Size:78K _secos

2SC1030C

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Base ?Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A 4.40 4.70

5.13. 2sc1050.pdf Size:188K _wingshing

2SC1030C

Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current (DC

5.14. 2sc1008.pdf Size:352K _hua-yuan

2SC1030C
2SC1030C

??????????? DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W(Tamb=25?) 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO : 80 V Operating and storage junct

5.15. 2sc1027.pdf Size:160K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute ma

5.16. 2sc1096.pdf Size:108K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION ·With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitt

5.17. 2sc1050.pdf Size:159K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1050 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UN

5.18. 2sc1061.pdf Size:206K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

5.19. 2sc1098.pdf Size:173K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION ·With TO-202 package ·High Voltage ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202)

5.20. 2sc1080.pdf Size:154K _jmnic

2SC1030C
2SC1030C

JMnic Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CO

5.21. 2sc1051.pdf Size:170K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1051 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARA

5.22. 2sc1079.pdf Size:174K _jmnic

2SC1030C
2SC1030C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

5.23. 2sc1079 2sc1080.pdf Size:122K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SA679/680 Ў¤ High power dissipation APPLICATIONS Ў¤ For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ў

5.24. 2sc1027.pdf Size:113K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SY

5.25. 2sc1096.pdf Size:117K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-202 package Ў¤ Low breakdown voltage Ў¤ High current Ў¤ High fT APPLICATIONS Ў¤ For audio frequency power amplifier and low speed switching applications Ў¤ Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter D

5.26. 2sc1098 2sc1098a.pdf Size:118K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION Ў¤ With TO-202 package Ў¤ High Voltage Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency power amplifier Ў¤ Low speed switching Ў¤ Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute

5.27. 2sc1050.pdf Size:114K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1050 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in audio and general purpose applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

5.28. 2sc1061.pdf Size:145K _inchange_semiconductor

2SC1030C
2SC1030C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

5.29. 2sc1051.pdf Size:120K _inchange_semiconductor

2SC1030C
2SC1030C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1051 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж )

5.30. 2sc1008.pdf Size:346K _wietron

2SC1030C
2SC1030C

WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25°C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ °C -55 to +150 Tstg Storage Temperature °C ELECTRICAL CHARACTERIS

5.31. 2sc1009.pdf Size:1663K _kexin

2SC1030C
2SC1030C

SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

Datasheet: 2SC1024 , 2SC1025 , 2SC1026 , 2SC1029 , 2SC103 , 2SC1030 , 2SC1030A , 2SC1030B , BC327 , 2SC1031 , 2SC1032 , 2SC1033 , 2SC1033A , 2SC1034 , 2SC1035 , 2SC1036 , 2SC1037 .

 


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