All Transistors. 2SC3112 Datasheet

 

2SC3112 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3112

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: TO92

2SC3112 Transistor Equivalent Substitute - Cross-Reference Search

 

 

2SC3112 Datasheet (PDF)

1.1. 2sc3112.pdf Size:257K _toshiba

2SC3112
2SC3112

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit: mm • High DC current gain: hFE = 600~3600 • High breakdown voltage: V = 50 V CEO • High collector current: I = 150 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collect

4.1. 2sc3113.pdf Size:266K _toshiba

2SC3112
2SC3112

2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit: mm • High DC current gain: h = 600~3600 FE • High breakdown voltage: V = 50 V CEO • High collector current: I = 150 mA (max) C • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

4.2. 2sc3114.pdf Size:41K _sanyo

2SC3112
2SC3112

Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit:mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter 2 : Collector ( ) : 2SA1246 3 : Base 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ra

 4.3. 2sc3116.pdf Size:47K _sanyo

2SC3112
2SC3112

Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1248/2SC3116] High breakdown voltage. 8.0 2.7 4.0 Large current capacity. Using MBIT process 3.0 1.6 0.8 0.8 0.6 0.5 1 : Emitter 1 2 3 2 : Collector

4.4. 2sc3117.pdf Size:41K _sanyo

2SC3112
2SC3112

Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1249/2SC3117] 8.0 High breakdown voltage. 2.7 4.0 Large current capacity. Adoption of MBIT process. 3.0 1.6 0.8 0.8 0.6 0.5 1 : Emitter 1 2 3 2 : Coll

 4.5. 2sa1246 2sc3114.pdf Size:41K _sanyo

2SC3112
2SC3112

Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit:mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter 2 : Collector ( ) : 2SA1246 3 : Base 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ra

4.6. 2sc3110.pdf Size:47K _no

2SC3112

4.7. 2sc3117.pdf Size:197K _jmnic

2SC3112
2SC3112

JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION ·With TO-126 package ·Complement to type 2SA1249 ·High breakdown voltage ·Large current capacity APPLICATIONS ·Color TV sound output;converters; Inverters’ applications ·160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

4.8. 2sc3117.pdf Size:162K _inchange_semiconductor

2SC3112
2SC3112

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1249 Ў¤ High breakdown voltage Ў¤ Large current capacity APPLICATIONS Ў¤ Color TV sound output;converters; Inverters' applications Ў¤ 160V/1.5A switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTIO

4.9. 2sc3110.pdf Size:63K _inchange_semiconductor

2SC3112
2SC3112

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B

Datasheet: 2SC3104 , 2SC3105 , 2SC3106 , 2SC3107 , 2SC3108 , 2SC3109 , 2SC3110 , 2SC3111 , BC327 , 2SC3112A , 2SC3112B , 2SC3113 , 2SC3113A , 2SC3113B , 2SC3114 , 2SC3115 , 2SC3116 .

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