All Transistors. 2SC3417D Datasheet

 

2SC3417D Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3417D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 2.6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

2SC3417D Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3417D Datasheet (PDF)

3.1. 2sc3417 3da3417.pdf Size:261K _update

2SC3417D
2SC3417D

2SC3417(3DA3417) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:高清晰度显像管视频输出,彩电色度输出和高击穿电压驱动。/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. 特点:耐压高,高频特性好。/Features: High breakdown voltage, excellent high frequency Characteristic. 极限参数/Absolute maxi

3.2. 2sc3417.pdf Size:150K _sanyo

2SC3417D
2SC3417D

Ordering number:EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage : VCEO? 300V. Excellent high frequency c

4.1. 2sc3415s.pdf Size:68K _update

2SC3417D
2SC3417D

2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter (2) Base (3) Collector 0.3Min. Absolute maximum ratings (Ta=25°

4.2. 2sc3419.pdf Size:176K _toshiba

2SC3417D
2SC3417D

4.3. 2sc3416.pdf Size:149K _sanyo

2SC3417D
2SC3417D

Ordering number:EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit:mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage : VCEO? 200V. Small reverse transfer capacitance and excellent high frequency ch

4.4. 2sc4061k 2sc3415s 2sc4015.pdf Size:163K _rohm

2SC3417D
2SC3417D

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter ?Absolute maximum ratings (Ta=25?C) (2) Base (3) Collector Parameter Symbol Limits Unit 0.3Min. ROHM : SMT3 Eac

4.5. 2sc3413.pdf Size:24K _hitachi

2SC3417D
2SC3417D

2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC

4.6. 2sc3415.pdf Size:78K _secos

2SC3417D

2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High Breakdown Voltage G H ? Low Collector Output Capacitance ? Ideal for Chroma Circuit ?Emitter ?Collector J ?Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC3415-M 2SC3415-

4.7. 2sc3416.pdf Size:233K _inchange_semiconductor

2SC3417D
2SC3417D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V

4.8. 2sc3412.pdf Size:220K _inchange_semiconductor

2SC3417D
2SC3417D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Power Dissipation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitte

Datasheet: 2SC3415 , 2SC3416 , 2SC3416C , 2SC3416D , 2SC3416E , 2SC3416F , 2SC3417 , 2SC3417C , 9013 , 2SC3417E , 2SC3417F , 2SC3418 , 2SC3419 , 2SC3419O , 2SC3419Y , 2SC342 , 2SC3420 .

 


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