All Transistors. 2SC522 Datasheet

 

2SC522 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC522

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO37

2SC522 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC522 Datasheet (PDF)

1.1. 2sc5226a-4-tl-e.pdf Size:237K _update

2SC522
2SC522

Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

1.2. 2sc5227a-5-tb-e.pdf Size:229K _update

2SC522
2SC522

Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

 1.3. 2sc5227a-4-tb-e.pdf Size:229K _update

2SC522
2SC522

Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-t

1.4. 2sc5226a-5-tl-e.pdf Size:237K _update

2SC522
2SC522

Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain ⏐ ⏐2 : S21e =12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-

 1.5. 2sc5226.pdf Size:112K _sanyo

2SC522
2SC522

Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2059B High cutoff frequency : fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 :

1.6. 2sc5227.pdf Size:127K _sanyo

2SC522
2SC522

Ordering number:EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2018B High cutoff frequency : fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector

1.7. 2sc5227a.pdf Size:75K _sanyo

2SC522
2SC522

Ordering number : ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Uni

1.8. 2sc5229.pdf Size:134K _sanyo

2SC522
2SC522

Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =10.5dB typ (f=1GHz). 2038A High cutoff frequency : fT=6.5GHz typ. [2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V, IC=40mA)

1.9. 2sc5228.pdf Size:128K _sanyo

2SC522
2SC522

Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13.5dB typ (f=1GHz). 2110A High cutoff frequency : fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2 :

1.10. 2sc5226a.pdf Size:75K _sanyo

2SC522
2SC522

Ordering number : ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Uni

1.11. 2sc5223.pdf Size:42K _panasonic

2SC522
2SC522

Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 For high-speed switching 0.5 0.1 1.0 0.1 Features 0.1 0.05 0.93 0.1 0.5 0.1 High collector to base voltage VCBO 0.75 0.1 2.3 0.1 High collector to emitter VCEO 4.6 0.1 1:Base 2:Collector 3:Emitter 1 2 3 Absolute Maximum Ratings (Ta=25?C) U Type Package

1.12. 2sc5225.pdf Size:29K _hitachi

2SC522
2SC522

2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.4 GHz Small output capacitance. Cob = 3 pF 2SC5

1.13. 2sc5227.pdf Size:974K _kexin

2SC522
2SC522

SMD Type Transistors NPN Transistors 2SC5227 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

1.14. 2sc5229.pdf Size:1268K _kexin

2SC522
2SC522

SMD Type Transistors NPN Transistors 2SC5229 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

Datasheet: 2SC520 , 2SC5206 , 2SC5207A , 2SC520A , 2SC520M , 2SC521 , 2SC5219 , 2SC521A , 2N5088 , 2SC522M , 2SC522O , 2SC522R , 2SC523 , 2SC5237 , 2SC5239 , 2SC523D , 2SC523O .

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