All Transistors. 2SC607 Datasheet

 

2SC607 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC607

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2SC607 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC607 Datasheet (PDF)

1.1. 2sc6075.pdf Size:201K _update

2SC607
2SC607

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160

1.2. 2sc6077.pdf Size:302K _update

2SC607
2SC607

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications Unit: mm ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) • High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-ba

1.3. 2sc6078.pdf Size:270K _update

2SC607
2SC607

2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 ○ Power Amplifier Applications Unit: mm ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) • High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V

1.4. 2sc6072.pdf Size:259K _update

2SC607
2SC607

2SC6072 東芝複合デバイス シリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 単位: mm ○ 励振段電力増幅用 • トランジション周波数が高い。 :fT=200MHz(標準) 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ ・ ベ ー ス 間 電 圧 VCBO V 180 コレクタ・エミッタ間

1.5. 2sc6076 091221.pdf Size:196K _toshiba

2SC607
2SC607

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 ?s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter vo

1.6. 2sc6079 070607.pdf Size:188K _toshiba

2SC607
2SC607

2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 ?s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 V

Datasheet: 2SC601 , 2SC601N , 2SC602 , 2SC602N , 2SC603 , 2SC604 , 2SC605 , 2SC606 , BC148 , 2SC608 , 2SC608T , 2SC609 , 2SC609T , 2SC61 , 2SC610 , 2SC611 , 2SC611N .

 


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