All Transistors. 2SD1014 Datasheet

 

2SD1014 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1014

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 50 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92

2SD1014 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1014 Datasheet (PDF)

4.1. 2sd1012.pdf Size:57K _sanyo

2SD1014
2SD1014

Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratin

4.2. 2sd1010.pdf Size:38K _panasonic

2SD1014
2SD1014

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

4.3. 2sd1011.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27

4.4. 2sd1011 e.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 100 V 1.27

4.5. 2sd1010 e.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collect

4.6. 2sd1015.pdf Size:39K _sony

2SD1014

Datasheet: 2SD100A , 2SD101 , 2SD1010 , 2SD1011 , 2SD1012 , 2SD1012F , 2SD1012G , 2SD1012H , BC639 , 2SD1015 , 2SD1016 , 2SD1017 , 2SD1018 , 2SD102 , 2SD1020 , 2SD1020G , 2SD1020O .

 


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