All Transistors. 2SD1115K Datasheet

 

2SD1115K Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1115K

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO220

2SD1115K Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1115K Datasheet (PDF)

1.1. 2sd1115k.pdf Size:57K _inchange_semiconductor

2SD1115K
2SD1115K

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

3.1. 2sd1115.pdf Size:259K _inchange_semiconductor

2SD1115K
2SD1115K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1115 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

 4.1. 2sd1111.pdf Size:71K _sanyo

2SD1115K
2SD1115K

Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2003B [2SD1111] 5.0 Features 4.0 4.0 High DC Current Gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage (VCE(sat)=0.

4.2. 2sd1119.pdf Size:38K _panasonic

2SD1115K
2SD1115K

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4 0.08 automatic insertion through the

 4.3. 2sd1119 e.pdf Size:42K _panasonic

2SD1115K
2SD1115K

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4 0.08 automatic insertion through the

4.4. 2sd1118.pdf Size:100K _fuji

2SD1115K
2SD1115K

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 4.5. 2sd1113.pdf Size:32K _hitachi

2SD1115K
2SD1115K

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6 k? 450 ? 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7V Collector current IC 6A Collector peak current IC(peak

4.6. 2sd1117.pdf Size:258K _inchange_semiconductor

2SD1115K
2SD1115K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 APPLICATIONS ·Designed for audio amplifier, series regulators and general purpos

4.7. 2sd1110.pdf Size:256K _inchange_semiconductor

2SD1115K
2SD1115K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

4.8. 2sd111.pdf Size:239K _inchange_semiconductor

2SD1115K
2SD1115K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25? ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

4.9. 2sd1118.pdf Size:267K _inchange_semiconductor

2SD1115K
2SD1115K

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifier

4.10. 2sd1119.pdf Size:510K _htsemi

2SD1115K
2SD1115K

2SD1119 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

4.11. 2sd1119.pdf Size:187K _lge

2SD1115K
2SD1115K

2SD1119 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 voltage power supply. 3.0 Dimensions in inches and

4.12. 2sd1119.pdf Size:299K _kexin

2SD1115K

SMD Type Transistors NPN Transistors 2SD1119 1.70 0.1 ■ Features ● Collector Current Capability IC=3 A ● Collector Emitter Voltage VCEO=25 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

Datasheet: 2SD1110A , 2SD1111 , 2SD1112 , 2SD1113 , 2SD1113K , 2SD1114 , 2SD1114K , 2SD1115 , AC128 , 2SD1116 , 2SD1117 , 2SD1117A , 2SD1118 , 2SD1119 , 2SD1120 , 2SD1120O , 2SD1121 .

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