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2SD1201 PDF Specs and Replacement


   Type Designator: 2SD1201
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO3
 

 2SD1201 Substitution

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2SD1201 PDF detailed specifications

 8.1. Size:51K  1
2sd1205a.pdf pdf_icon

2SD1201

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE = 4000 to 2000. A shunt resistor is omitted from the driver. 0.85 M type package all... See More ⇒

 8.2. Size:86K  1
2sd1206.pdf pdf_icon

2SD1201

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 8.3. Size:51K  sanyo
2sd1207.pdf pdf_icon

2SD1201

Ordering number EN930D 2SB892 / 2SD1207 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB892 / 2SD1207 Large-Current Switching Applications Applications Power supplies, relay drivers, lamp drivers, and automotive wiring. Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and ... See More ⇒

 8.4. Size:42K  rohm
2sd1200.pdf pdf_icon

2SD1201

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278 ... See More ⇒

Detailed specifications: 2SD1196 , 2SD1197 , 2SD1198 , 2SD1198A , 2SD1199 , 2SD12 , 2SD120 , 2SD1200 , MJE340 , 2SD1202 , 2SD1203 , 2SD1204 , 2SD1205 , 2SD1205A , 2SD1206 , 2SD1207 , 2SD1207R .

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