All Transistors. 2SD1523 Datasheet

 

2SD1523 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1523

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TOP3

2SD1523 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1523 Datasheet (PDF)

4.1. 2sd1525.pdf Size:175K _toshiba

2SD1523
2SD1523

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm • High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni

4.2. 2sd1520.pdf Size:373K _hitachi

2SD1523
2SD1523

 4.3. 2sd1527.pdf Size:32K _hitachi

2SD1523
2SD1523

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector power dissipation PC 1.8 W PC*

4.4. 2sd1521.pdf Size:34K _hitachi

2SD1523
2SD1523

2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 2 k? 0.5 k? 2 3 (Typ) (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current IC (peak) 3.0 A Collector power d

 4.5. 2sd1528.pdf Size:242K _inchange_semiconductor

2SD1523
2SD1523

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

4.6. 2sd1525.pdf Size:259K _inchange_semiconductor

2SD1523
2SD1523

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

Datasheet: 2SD1518 , 2SD1519 , 2SD152 , 2SD1520 , 2SD1520L , 2SD1520S , 2SD1521 , 2SD1522 , BD135 , 2SD1524 , 2SD1525 , 2SD1526 , 2SD1527 , 2SD1528 , 2SD1529 , 2SD153 , 2SD1530 .

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