All Transistors. 2SD1625 Datasheet

 

2SD1625 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1625

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SP0

2SD1625 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1625 Datasheet (PDF)

1.1. 2sd1625.pdf Size:115K _sanyo

2SD1625
2SD1625

Ordering number:2017A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1125/2SD1625 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2038 [2SB1125/2SD1625] Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high- density, sm

1.2. 2sd1625.pdf Size:1049K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1625 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.7A ● Collector Emitter Voltage VCEO=50V ● Complementary to 2SB1125 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

4.1. 2sd1623.pdf Size:33K _sanyo

2SD1625
2SD1625

Ordering number : ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, unit : mm electrical equipment. 2038A [2SB1123 / 2SD1623] Features 4.5 1.5 • Adoption of FBET, MBIT processes. 1.6 • Low collector-to-emitter saturation v

4.2. 2sd1626.pdf Size:87K _sanyo

2SD1625
2SD1625

Ordering number:1721A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1126/2SD1626 For Various Drivers Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers, 2038 [2SB1126/2SD1626] Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high- density, small-sized hybrid

4.3. 2sb1124 2sd1624.pdf Size:108K _sanyo

2SD1625
2SD1625

Ordering number:ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2038A [2SB1124/2SD1624] Features 4.5 1.5 1.6 · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching

4.4. 2sd1627.pdf Size:67K _sanyo

2SD1625
2SD1625

Ordering number:EN2016A NPN Epitaxial Planar Silicon Transistor 2SD1627 Driver Applications Applications Package Dimensions · Motor drivers, hammer drivers, relay drivers, voltage unit:mm regulator control. 2038A [2SD1627] 4.5 Features 1.5 1.6 · High DC current gain (hFE? 4000). · Wide ASO. · Very small size making it easy to provide high- density, small-sized hybrid ICs. 0.4

4.5. 2sd1628.pdf Size:99K _sanyo

2SD1625
2SD1625

Ordering number:EN1781A NPN Epitaxial Planar Silicon Transistor 2SD1628 High-Current Switching Applications Applications Package Dimensions · Strobe DC-DC converters, relay drivers, hammer unit:mm drivers, lamp drivers, motor drovers. 2038A [2SD1628] 4.5 Features 1.5 1.6 · Low saturation voltage. · High hFE. · Large current capacity. · Very small size making it easy to provid

4.6. 2sb1123 2sd1623.pdf Size:99K _sanyo

2SD1625
2SD1625

Ordering number : EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide

4.7. 2sd1621.pdf Size:108K _sanyo

2SD1625
2SD1625

Ordering number:1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2038 [2SB1121/2SD1621] Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO.

4.8. 2sd1624.pdf Size:143K _sanyo

2SD1625
2SD1625

Ordering number:2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2038 [2SB1124/2SD1624] Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large cu

4.9. 2sd1620.pdf Size:85K _sanyo

2SD1625
2SD1625

Ordering number : EN1719C 2SD1620 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. •

4.10. 2sd1622.pdf Size:137K _sanyo

2SD1625
2SD1625

Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions · Voltage regulators relay drivers, lamp drivers, unit:mm electrical equipment. 2038 [2SB1122/2SD1622] Features · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. E : Emitter

4.11. 2sd1624.pdf Size:238K _utc

2SD1625
2SD1625

UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO ORDERIN

4.12. 2sd1623.pdf Size:1151K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1623 1.70 0.1 ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. 0.42 0.1 0.46 0.1 ● Fast switching speed. ● Complementary to 2SB1123 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - E

4.13. 2sd1626.pdf Size:901K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1626 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=50V ● Complementary to 2SB1126 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

4.14. 2sd1627.pdf Size:922K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1627 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

4.15. 2sd1628.pdf Size:784K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1628 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO

4.16. 2sd1621.pdf Size:995K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1621 1.70 0.1 ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. 0.42 0.1 0.46 0.1 ● Complementary transistor with the 2SB1121 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

4.17. 2sd1624.pdf Size:1172K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1624 ■ Features 1.70 0.1 ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

4.18. 2sd1620.pdf Size:1062K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1620 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEX 20 V Collector - Emitter Voltag

4.19. 2sd1622.pdf Size:1161K _kexin

2SD1625
2SD1625

SMD Type Transistors NPN Transistors 2SD1622 1.70 0.1 ■ Features ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. 0.42 0.1 0.46 0.1 ● Complementary to 2SB1122 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitt

Datasheet: 2SD1623S , 2SD1623T , 2SD1623U , 2SD1624 , 2SD1624R , 2SD1624S , 2SD1624T , 2SD1624U , 2N2222 , 2SD1626 , 2SD1627 , 2SD1628 , 2SD1628E , 2SD1628F , 2SD1628G , 2SD1629 , 2SD163 .

 


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